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- Flash编程基础知识
- Flash Programming
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Flash编程基础知识
参考 Flash_Programming_1 for KIT_AURIX_TC397_TFT, 本例展示了如何烧写PFLASH
(Program Flash memory) 和 DFLASH
(Data Flash memory).
- 数据存储单元(
DMU
, Data Memory Unit)控制执行在PFLASH和DFLASH上的命令序列, 连接FSI
(Flash Standard Interface)和PFI
(Programming Flash Interface). - FSI在所有闪存上执行擦除, 编程和验证操作.
- PFI为每个PFLASH块与CPU提供唯一的点对点快速连接
- TC39x 提供 6 Program Flash Banks(PFx) 和 2 Data Flash Banks(DFx)
- TC3xx 具有相同扇区结构的PFLASH块PFx, PFx块大小可能不用: 3/2/1 Mbyte Program Flash Bank
- TC39x 有5个3MB大小的PFx(PF0…PF4) 和 1个1MB大小的PF5. 每个PFx被划分为1024KB大小的物理扇区(Physical Sectors), 每个物理扇区又被划分为16KB大小的逻辑扇区(Logical Sectors)
- TC39x具有两个数据闪存存储区DFLASH0和DFLASH1, 两者都包括多个通常用于EEPROM仿真的EEPROM扇区. 仅DFLASH0包含用于数据保护的用户配置块(UCBs, User Configuration Blocks)和1个配置扇区(CFS, Configuration Sector), 用户无法直接访问该配置扇区.
- DFLASH EEPROM可以配置为单端模式(默认)或补码检测(incomplement sensing). 根据所选模式, 每个扇区的大小分别设置为4KB和2KB
- 闪存中可以编程的最小数据量是页(Page), 程序闪存(Program Flash)页由32字节组成, 数据闪存(Data Flash)页由8字节组成
- 仅在擦除操作后才能对页面进行编程
- 可以执行擦除操作的最小单元是逻辑扇区(Logical Sector)
TC39x Program Flash Memeory:
TC39x Data Flash memory:
所有闪存操作均通过命令序列执行, DMU具有命令序列解释器(CSI, Command Sequence Interpreter)来处理命令序列, 用于对程序闪存或数据闪存进行编程的最小命令序列如下:
- 擦除逻辑扇区待编程
- 等待直到闪存就绪(不忙)
- 进入页面模式
- 等待直到闪存就绪(不忙)
- 加载要写入页面的数据
- 写页面
- 等待直到闪存内存已准备就绪(不忙)
注:执行PFLASH编程或擦除的代码不应从同一PFLASH执行
PF0…PF5的地址映射为:
Address Range | Size | Description | Read | Write |
---|
A000 0000H - A02F FFFFH | 3 Mbyte | Program Flash 0 (PF0) | Access | SRIBE |
A030 0000H - A05F FFFFH | 3 Mbyte | Program Flash 1 (PF1) | Access | SRIBE |
A060 0000H - A08F FFFFH | 3 Mbyte | Program Flash 2 (PF2) | Access | SRIBE |
A090 0000H - A0BF FFFFH | 3 Mbyte | Program Flash 3 (PF3) | Access | SRIBE |
A0C0 0000H - A0EF FFFFH | 3 Mbyte | Program Flash 4 (PF4) | Access | SRIBE |
A0F0 0000H - A0FF FFFFH | 1 Mbyte | Program Flash 5 (PF5) | Access | SRIBE |
其中, SRIBE
: A bus access is terminated with a bus error on the SRI(SRI上的总线错误终止总线访问)
DF0…DF1的地址映射为:
Address Range | Size | Description | Read | Write |
---|
AF00 0000H - AF0F FFFFH | 1 Mbyte | Data Flash 0 EEPROM (DF0) Host Comd. Sequence Interpreter | Access | Access 1) |
AF10 0000H - AF3F FFFFH | 3 Mbyte | Reserved | SRIBE | SRIBE |
AF40 0000H - AF40 5FFFH | 24 Kbyte | Data Flash 0 UCB (DF0) | Access | SRIBE |
AF40 6000H - AF7F FFFFH | - | Reserved | SRIBE | SRIBE |
AF80 0000H - AF80 FFFFH | 64 Kbyte | Data Flash 0 CFS (DF0) | Access | SRIBE |
AF81 0000H - AFBF FFFFH | - | Reserved | SRIBE | SRIBE |
AFC0 0000H - AFC1 FFFFH | 128 Kbyte | Data Flash 1 EEPROM (DF1) HSM Comd. Sequence Interpreter | Access | Access 2) |
其中:
-
- Host Command Sequence Interpreter(主机命令序列解释器)
-
- HSM Command Sequence Interpreter(HSM命令序列解释器)
Flash Programming
直接搬运官方的例程来看, 此例中, 程序闪存(PFLASH)的64个字节随后被烧写并验证. 此外, 烧写并验证了64字节的数据闪存(DFLASH). 在进行任何写操作之前, 将擦除闪存, 如果闪存烧写并验证成功, 则将打开每个测试内存的LED.
闪存中可以编程的最小数据量是页(Page), 程序闪存(Program Flash)页由32字节组成, 数据闪存(Data Flash)页由8字节组成, 所以64字节对应PFLASH的2页, DFLASH的8页.
Cpu0_Main.c 代码如下:
#include "Ifx_Types.h"
#include "IfxCpu.h"
#include "IfxScuWdt.h"
IFX_ALIGN(4) IfxCpu_syncEvent g_cpuSyncEvent = 0;
#include <string.h>
#include "Ifx_Types.h"
#include "IfxFlash.h"
#include "IfxCpu.h"
void initLEDs(void);
void writeProgramFlash(void);
void writeDataFlash(void);
void verifyProgramFlash(void);
void verifyDataFlash(void);
#define PFLASH_PAGE_LENGTH IFXFLASH_PFLASH_PAGE_LENGTH
#define DFLASH_PAGE_LENGTH IFXFLASH_DFLASH_PAGE_LENGTH
#define FLASH_MODULE 0
#define PROGRAM_FLASH_0 IfxFlash_FlashType_P0
#define DATA_FLASH_0 IfxFlash_FlashType_D0
#define DATA_TO_WRITE 0x07738135
#define PFLASH_STARTING_ADDRESS 0xA00E0000
#define DFLASH_STARTING_ADDRESS 0xAF000000
#define PFLASH_NUM_PAGE_TO_FLASH 2
#define PFLASH_NUM_SECTORS 1
#define DFLASH_NUM_PAGE_TO_FLASH 8
#define DFLASH_NUM_SECTORS 1
#define ERASESECTOR_LEN (100)
#define WAITUNBUSY_LEN (100)
#define ENTERPAGEMODE_LEN (100)
#define LOADPAGE2X32_LEN (100)
#define WRITEPAGE_LEN (100)
#define ERASEPFLASH_LEN (0x100)
#define WRITEPFLASH_LEN (0x200)
#define RELOCATION_START_ADDR (0x70100000U)
#define ERASESECTOR_ADDR (RELOCATION_START_ADDR)
#define WAITUNBUSY_ADDR (ERASESECTOR_ADDR + ERASESECTOR_LEN)
#define ENTERPAGEMODE_ADDR (WAITUNBUSY_ADDR + WAITUNBUSY_LEN)
#define LOAD2X32_ADDR (ENTERPAGEMODE_ADDR + ENTERPAGEMODE_LEN)
#define WRITEPAGE_ADDR (LOAD2X32_ADDR + LOADPAGE2X32_LEN)
#define ERASEPFLASH_ADDR (WRITEPAGE_ADDR + WRITEPAGE_LEN)
#define WRITEPFLASH_ADDR (ERASEPFLASH_ADDR + ERASEPFLASH_LEN)
#define LED1 &MODULE_P13,0
#define LED2 &MODULE_P13,1
#define MEM(address) *((uint32 *)(address))
void erasePFLASH(uint32 sectorAddr);
void writePFLASH(uint32 startingAddr);
void copyFunctionsToPSPR(void);
typedef struct
{
void (*eraseSectors)(uint32 sectorAddr, uint32 numSector);
uint8 (*waitUnbusy)(uint32 flash, IfxFlash_FlashType flashType);
uint8 (*enterPageMode)(uint32 pageAddr);
void (*load2X32bits)(uint32 pageAddr, uint32 wordL, uint32 wordU);
void (*writePage)(uint32 pageAddr);
void (*eraseFlash)(uint32 sectorAddr);
void (*writeFlash)(uint32 startingAddr);
} Function;
Function g_commandFromPSPR;
void initLEDs()
{
IfxPort_setPinMode(LED1, IfxPort_Mode_outputPushPullGeneral);
IfxPort_setPinMode(LED2, IfxPort_Mode_outputPushPullGeneral);
IfxPort_setPinState(LED1, IfxPort_State_high);
IfxPort_setPinState(LED2, IfxPort_State_high);
}
void copyFunctionsToPSPR()
{
memcpy((void *)ERASESECTOR_ADDR, (const void *)IfxFlash_eraseMultipleSectors, ERASESECTOR_LEN);
g_commandFromPSPR.eraseSectors = (void *)ERASESECTOR_ADDR;
memcpy((void *)WAITUNBUSY_ADDR, (const void *)IfxFlash_waitUnbusy, WAITUNBUSY_LEN);
g_commandFromPSPR.waitUnbusy = (void *)WAITUNBUSY_ADDR;
memcpy((void *)ENTERPAGEMODE_ADDR, (const void *)IfxFlash_enterPageMode, ENTERPAGEMODE_LEN);
g_commandFromPSPR.enterPageMode = (void *)ENTERPAGEMODE_ADDR;
memcpy((void *)LOAD2X32_ADDR, (const void *)IfxFlash_loadPage2X32, LOADPAGE2X32_LEN);
g_commandFromPSPR.load2X32bits = (void *)LOAD2X32_ADDR;
memcpy((void *)WRITEPAGE_ADDR, (const void *)IfxFlash_writePage, WRITEPAGE_LEN);
g_commandFromPSPR.writePage = (void *)WRITEPAGE_ADDR;
memcpy((void *)ERASEPFLASH_ADDR, (const void *)erasePFLASH, ERASEPFLASH_LEN);
g_commandFromPSPR.eraseFlash = (void *)ERASEPFLASH_ADDR;
memcpy((void *)WRITEPFLASH_ADDR, (const void *)writePFLASH, WRITEPFLASH_LEN);
g_commandFromPSPR.writeFlash = (void *)WRITEPFLASH_ADDR;
}
void erasePFLASH(uint32 sectorAddr)
{
uint16 endInitSafetyPassword = IfxScuWdt_getSafetyWatchdogPasswordInline();
IfxScuWdt_clearSafetyEndinitInline(endInitSafetyPassword);
g_commandFromPSPR.eraseSectors(sectorAddr, PFLASH_NUM_SECTORS);
IfxScuWdt_setSafetyEndinitInline(endInitSafetyPassword);
g_commandFromPSPR.waitUnbusy(FLASH_MODULE, PROGRAM_FLASH_0);
}
void writePFLASH(uint32 startingAddr)
{
uint32 page;
uint32 offset;
uint16 endInitSafetyPassword = IfxScuWdt_getSafetyWatchdogPasswordInline();
for(page = 0; page < PFLASH_NUM_PAGE_TO_FLASH; page++)
{
uint32 pageAddr = startingAddr + (page * PFLASH_PAGE_LENGTH);
g_commandFromPSPR.enterPageMode(pageAddr);
g_commandFromPSPR.waitUnbusy(FLASH_MODULE, PROGRAM_FLASH_0);
for(offset = 0; offset < PFLASH_PAGE_LENGTH; offset += 0x8)
{
g_commandFromPSPR.load2X32bits(pageAddr, DATA_TO_WRITE, DATA_TO_WRITE);
}
IfxScuWdt_clearSafetyEndinitInline(endInitSafetyPassword);
g_commandFromPSPR.writePage(pageAddr);
IfxScuWdt_setSafetyEndinitInline(endInitSafetyPassword);
g_commandFromPSPR.waitUnbusy(FLASH_MODULE, PROGRAM_FLASH_0);
}
}
void writeProgramFlash()
{
boolean interruptState = IfxCpu_disableInterrupts();
copyFunctionsToPSPR();
g_commandFromPSPR.eraseFlash(PFLASH_STARTING_ADDRESS);
g_commandFromPSPR.writeFlash(PFLASH_STARTING_ADDRESS);
IfxCpu_restoreInterrupts(interruptState);
}
void verifyProgramFlash()
{
uint32 page;
uint32 offset;
uint32 errors = 0;
for(page = 0; page < PFLASH_NUM_PAGE_TO_FLASH; page++)
{
uint32 pageAddr = PFLASH_STARTING_ADDRESS + (page * PFLASH_PAGE_LENGTH);
for(offset = 0; offset < PFLASH_PAGE_LENGTH; offset += 0x4)
{
if(MEM(pageAddr + offset) != DATA_TO_WRITE)
{
errors++;
}
}
}
if(errors == 0)
{
IfxPort_setPinState(LED1, IfxPort_State_low);
}
}
void writeDataFlash()
{
uint32 page;
uint16 endInitSafetyPassword = IfxScuWdt_getSafetyWatchdogPassword();
IfxScuWdt_clearSafetyEndinit(endInitSafetyPassword);
IfxFlash_eraseMultipleSectors(DFLASH_STARTING_ADDRESS, DFLASH_NUM_SECTORS);
IfxScuWdt_setSafetyEndinit(endInitSafetyPassword);
IfxFlash_waitUnbusy(FLASH_MODULE, DATA_FLASH_0);
for(page = 0; page < DFLASH_NUM_PAGE_TO_FLASH; page++)
{
uint32 pageAddr = DFLASH_STARTING_ADDRESS + (page * DFLASH_PAGE_LENGTH);
IfxFlash_enterPageMode(pageAddr);
IfxFlash_waitUnbusy(FLASH_MODULE, DATA_FLASH_0);
IfxFlash_loadPage2X32(pageAddr, DATA_TO_WRITE, DATA_TO_WRITE);
IfxScuWdt_clearSafetyEndinit(endInitSafetyPassword);
IfxFlash_writePage(pageAddr);
IfxScuWdt_setSafetyEndinit(endInitSafetyPassword);
IfxFlash_waitUnbusy(FLASH_MODULE, DATA_FLASH_0);
}
}
void verifyDataFlash()
{
uint32 page;
uint32 offset;
uint32 errors = 0;
for(page = 0; page < DFLASH_NUM_PAGE_TO_FLASH; page++)
{
uint32 pageAddr = DFLASH_STARTING_ADDRESS + (page * DFLASH_PAGE_LENGTH);
for(offset = 0; offset < DFLASH_PAGE_LENGTH; offset += 0x4)
{
if(MEM(pageAddr + offset) != DATA_TO_WRITE)
{
errors++;
}
}
}
if(errors == 0)
{
IfxPort_setPinState(LED2, IfxPort_State_low);
}
}
void core0_main(void)
{
IfxCpu_enableInterrupts();
IfxScuWdt_disableCpuWatchdog(IfxScuWdt_getCpuWatchdogPassword());
IfxScuWdt_disableSafetyWatchdog(IfxScuWdt_getSafetyWatchdogPassword());
IfxCpu_emitEvent(&g_cpuSyncEvent);
IfxCpu_waitEvent(&g_cpuSyncEvent, 1);
initLEDs();
writeProgramFlash();
verifyProgramFlash();
writeDataFlash();
verifyDataFlash();
while(1)
{
}
}
编译运行程序, 两个LED亮表示Flash操作成功.
在擦除和写PFLASH后面各打一个断点:
调试运行, Memory窗口中, 添加地址0xA00E0000
, Resume程序, 第一个断点停止, 将显示0或0xEEEEEEEE, 因为它无法读取已擦除的内存, 再Resume, 第二个断点停止后, 应显示64个字节, 内容为0x07738135
:
同理, DFLASH查看地址0xAF000000
:
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